欢迎访问新加坡聚知刊出版有限公司官方网站
65 84368249info@juzhikan.asia
等离激元诱导的宽光谱二硫化钼异质结器件
  • ISSN:3041-0673(Online)3041-0681(Print)
  • DOI:10.69979/3041-0673.25.02.085
  • 出版频率:月刊
  • 语言:中文
  • 收录数据库:ISSN:https://portal.issn.org/ 中国知网:https://scholar.cnki.net/journal/search

等离激元诱导的宽光谱二硫化钼异质结器件
黄明

湖南大学湖南长沙410082

摘要:随着光电技术的持续发展,光电探测器在成像技术、光谱分析以及通信等多个领域扮演着关键角色。然而,采用过渡金属二硫化物(TMD)材料的光电器件,因载流子迁移率较低及光与物质相互作用较弱等固有缺陷,面临着在新型探测器应用中展现优异性能的难题。本论文中,我们报告了利用化学气相沉积(CVD)技术成功合成单层MoS2,并通过微纳加工技术在MoS2表面构造等离子体纳米结构的过程。借助COMSOL软件的模拟分析,我们发现等离激元效应能显著提升MoS2的光吸收能力,使其光谱吸收范围扩展至红外区域。最终,我们将此材料制成了电学器件,并在可见光条件下测得该器件的光响应度高达1000 A/W。

关键词:光电探测器二硫化钼等离激元COMSOL

参考文献

[1] Paul T, Ahmed T, Kanhaiya Tiwari K, et al. A high-performance MoS2 synaptic device with floating gate engineering for neuromorphic computing[J]. 2D Materials, 2019, 6(4): 045008.

[2] Abnavi A, Ahmadi R, Hasani A, et al. Free-Standing Multilayer Molybdenum Disulfide Memristor for Brain-Inspired Neuromorphic Applications[J]. ACS Applied Materials & Interfaces, 2021, 13(38): 45843-45853.

[3] Kim S G, Kim S H, Park J, et al. Infrared Detectable MoS2 Phototransistor and Its Application to Artificial Multilevel Optic-Neural Synapse[J]. ACS Nano, 2019, 13(9): 10294-10300.

[4] Park M, Kang G, Ko H. Plasmonic-tape-attached multilayered MoS2 film for near-infrared photodetection[J]. Scientific Reports, 2020, 10(1): 11340.

[5] Wang K, Dai S, Zhao Y, et al. Light-Stimulated Synaptic Transistors Fabricated by a Facile Solution Process Based on Inorganic Perovskite Quantum Dots and Organic Semiconductors[J]. Small, 2019, 15(11): 1900010.

[6] Xu L, Xiong H, Fu Z, et al. High Conductance Margin for Efficient Neuromorphic Computing Enabled by Stacking Nonvolatile van der Waals Transistors[J]. Physical Review Applied, 2021, 16(4): 044049.

[7] Vatansever D, Smallwood J, Jefferies E. Varying demands for cognitive control reveals shared neural processes supporting semantic and episodic memory retrieval[J]. Nature Communications, 2021, 12(1): 2134.

[8] Liang S-J, Li Y, Cheng B, et al. Emerging Low‐Dimensional Heterostructure Devices for Neuromorphic Computing[J]. Small Structures, 2022, 3(10): 2200064.

[9] Liu P, Luo H, Yin X, et al. A memristor based on two-dimensional MoSe2/MoS2 heterojunction for synaptic device application[J]. Applied Physics Letters, 2022, 121(23): 233501.

[10] Wang K, Ren S, Jia Y, et al. An Ultrasensitive Biomimetic Optic Afferent Nervous System with Circadian Learnability[J]. Advanced Science, 2024, 11(21): 2309489.